Published 2014 | Version v1
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Ballistic Transport at the Nanometric Inhomogeneities in Au/Nb:SrTiO3 Resistive Switches

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Novel ballistic electron emission microscopy experiments are reported, aimed to directly visualize and quantify the local inhomogeneities of the effective Schottky barrier height on Au/Nb:SrTiO3 Schottky junctions dominated by interfacial resistance switching effects. The voltage-dependent variation of the local barrier height of the nanometric patches could explain the non-ideal behaviour of the resistance switching effects in transition-metal oxide cells.

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URL
https://hdl.handle.net/11567/855444
URN
urn:oai:iris.unige.it:11567/855444