Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

We present capacitance-voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski-Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this material system an ideal candidate for high-temperature quantum applications. Charges and the internal electric fields influence the energy spacing in the QDs. We correlate photoluminescence measurements with C(V) measurements and show single-electron charging of the QDs and a Coulomb blockade energy of around 60 meV at room temperature. This finding demonstrates the possibility of quantum applications at room temperature.