Published November 12, 2023 | Version v1
Conference paper

[Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications

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Description

ED11-2 (Oral)PRICE: BEST STUDENT AWARD

Abstract

International audience

Additional details

Identifiers

URL
https://hal.science/hal-04397317
URN
urn:oai:HAL:hal-04397317v1

Origin repository

Origin repository
UNICA