Published March 26, 2025
| Version v1
Journal article
ScAlN/GaN-on-Si (111) HEMTs for RF applications
Contributors
Others:
- Puissance - IEMN (PUISSANCE - IEMN) ; Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA)
Description
Abstract ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher 2-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN. A sub-10 nm barrier ScAlN/GaN heterostructure, grown by ammonia-source molecular beam epitaxy on Si(111), is processed into transistors. The 2DEG density is 1.6x10 13 cm -2 with a mobility μ ∼ 621 cm 2 /V.s. A 75-nm gate length transistor exhibits a drain current density of 1.35 A/mm, a transconductance of ~284 mS/mm, a current gain cutoff frequency of 82 GHz and a maximum oscillation frequency of 112 GHz.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-05008937
- URN
- urn:oai:HAL:hal-05008937v1
Origin repository
- Origin repository
- UNICA