Published February 23, 2010
| Version v1
Journal article
Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon
Contributors
Others:
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Division Genetic Epidemiology in Psychiatry ; Central Institute of Mental Health [Mannheim] ; Medical Faculty [Mannheim]-Medical Faculty [Mannheim]
- Laboratoire de l'intégration, du matériau au système (IMS) ; Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)
Description
We report on the growth of thick (up to 1.2 µm) epitaxial samarium disilicide layers on (001) oriented silicon substrates. The films have the bulk tetragonal SmSi2 structure and composition, and grow with a preferential orientation SmSi2[100] ∥ Si[110]. A surface reconstruction transition from (1×1) to (2×2) appears below ∼525 °C. Transport measurements show an n-type metallic conduction with a room temperature resistivity of 175 µΩ cm decreasing to 85 µΩ cm at 4 K, and a carrier concentration of 1.3 ×1022 cm-3.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.archives-ouvertes.fr/hal-00585566
- URN
- urn:oai:HAL:hal-00585566v1
Origin repository
- Origin repository
- UNICA