Published November 15, 2003
| Version v1
Journal article
Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation.
Contributors
Others:
- Groupe d'étude des semiconducteurs (GES) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Actions Concertées Incitatives (ACI) du MENRT "INTRANIT" et "BUGATI".
- European Project: HPRN-CT-1999- 00132,CLERMONT
Description
The time dependence of the photoluminescence of GaN/AlN quantum dots (QD's) after high photoexcitation is examined on a large time scale. A continuous change in energy peak is reported, resulting in a giant energy shift of more than 1 eV after delays of several hundreds of microseconds. Simultaneously, the intensity decreases over more than seven orders of magnitude with a complex dynamics. These results are explained by the screening of the internal electric field due to the accumulation of electron-hole pairs in the dots. The dynamics can be qualitatively described by considering the change of the squared overlap integral and the effect of the number of the electron-hole pairs in the QD itself on the radiative lifetime.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-01303926
- URN
- urn:oai:HAL:hal-01303926v1
Origin repository
- Origin repository
- UNICA