Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

Creators: Lacroix, Bertrand; Chauvat, Marie-Pierre; Ruterana, Pierre; Nataf, G.; de Mierry, P.

Others:: Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252) ; Université de Caen Normandie (UNICAEN) ; Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN) ; Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

Description

For the next-generation solid state lighting, the production of high quality semipolar (112¯2) GaN layers on sapphire obtained using asymmetric epitaxial lateral overgrowth (ELO) method has been investigated. This type of ELO leads to efficient blocking of the basal stacking faults (BSFs) in the bulk, and enables the formation of nondefective layers at the surface. The BSFs terminate due to generation of prismatic stacking faults along a well defined boundary. The corresponding intensity of GaN band edge photoluminescence emission is increased by more than four orders of magnitude in comparison to that from semipolar templates.

Abstract

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Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

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Abstract

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