Published September 6, 2023
| Version v1
Journal article
Silicon diffusion in AlN
Contributors
Others:
- Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP) ; Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Description
In this study, we investigate the diffusion of Si donors in AlN. Amorphous Si 1−x N x sputtered on the surface of bulk AlN with low dislocation density is used as a Si source. The diffusion experiments are conducted through isochronal and isothermal annealing in a protective N 2 atmosphere at temperatures between 1500°C and 1700°C. The Si depth profiles measured by secondary ion mass
Additional details
Identifiers
- URL
- https://hal.science/hal-04285030
- URN
- urn:oai:HAL:hal-04285030v1
Origin repository
- Origin repository
- UNICA