Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction

Creators: Ngo, Thi Huong; Gil, Bernard; Damilano, B.; Lekhal, K.; de Mierry, P.

Others:: Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Physique de l'Exciton, du Photon et du Spin (PEPS) ; Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA); ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)

Description

We comparatively study the onset of photo-induced non-radiative intrinsic Auger recombination processes for red, yellow and green light emitting InGaNsingle bondGaN hetero-structures grown along the polar orientation. We find a dramatic reduction of the photo excitation densities triggering the domination of Auger effect with increasing emission wavelength; that is to say in concert with the enhancement of the internal electric field in the structure. In long wavelength emitters, the internal electric field is stronger, and hence reducing the impact of the internal electric field is more critical.

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Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction

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