Published December 7, 2020
| Version v1
Journal article
Magnetoresistance of epitaxial GdN films
Description
We report magnetoresistance measurements on epitaxial films of the intrinsic ferromagnetic semiconductor GdN electron doped with ∼1020cm−3 to ∼1021cm−3. The magnetoresistance across the temperature range of 10–300 K is dominated by a reduction of spin-disorder scattering in the presence of a magnetic field, imposing a resistance reduction of 27% in a field of 8 T. We show that the magnetoresistance closely follows the magnetic disorder as signaled by the departure of the magnetization from its fully saturated value Ms of 7μB/Gd3+.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-04903902
- URN
- urn:oai:HAL:hal-04903902v1
Origin repository
- Origin repository
- UNICA