Gate-Level Simulation of CMOS Circuits Using the IDDM Model

Description

Timing verification of digital CMOS circuits is a key point in the design process. In this contribution we present the extension to gates of the Inertial and Degradation Delay Model for logic timing simulation which is able to take account of the propagation of arbitrarily narrow pulses. As a result, the model is ready to be applied to the simulation and verification of complex circuits. Simulation results show an accuracy similar to HSPICE and greatly improved precision over conventional delay models.

Abstract

Ministerio de Ciencia y Tecnología TIC 2000-1350

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