Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

Creators: Mérelle, T.; Saigné, Frédéric; Sagnes, B.; Gasiot, G.; Roche, P.; Carrière, T.; Palau, M.-C.; Wrobel, Frédéric; Palau, J.-M.

Others:: Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS); EADS, Corporate Research Center ; EADS Paris; LPES - Laboratoire de Physique Electronique des Solides, EA 1174 ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)

Description

This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.

Abstract

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Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

Description

Abstract

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