Development of GaN Technology-Based DC/DC Converter for Hybrid UAV

Description

Wide band-gap (WBG) semiconductors technology represents a potential candidate to displace conventional silicon (Si) technology used in power electronics. Between Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors, the latter is the least mature of both technologies, with many open research problems, especially in the aerospace industry. In this paper, we address the design and implementation of a DC/DC converter for a hybrid small unmanned aerial vehicle (UAV) based on GaN technology. Both theoretical and simulation comparisons of Si, SiC and GaN transistors for the converter are presented. The conclusion is that GaN devices are the most appropriate to ful ll converter requirements for the size and weight limitations of the selected UAV. The paper presents a buck converter which handles an input voltage range of 32 V to 40 V and provides a 12 V regulated output and output power up to 60 W. The experimental results carried out on the prototype converter show how promising the GaN technology is for aerospace systems, not only regarding its volume and size, but also its ef ciency. Besides, practical implementation details are reported to contribute to the design of small, light and reliable GaN power converters for aeronautics.

Abstract

Ministerio de Ciencia, Innovación y Universidades RTI2018-101519-A-I00

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