Published January 9, 2001
| Version v1
Journal article
Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.
Contributors
Others:
- Groupe d'étude des semiconducteurs (GES) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Institute of High Pressure Physics [Warsaw] (IHPP) ; Polska Akademia Nauk = Polish Academy of Sciences (PAN)
- Actions Concertées Incitatives (ACI) du MENRT "BOQUANI" et "NANILUB".
- European Project: HPRN-CT-1999- 00132,CLERMONT
Description
We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-01302922
- URN
- urn:oai:HAL:hal-01302922v1
Origin repository
- Origin repository
- UNICA