Published 2006
| Version v1
Publication
Current-driven hysteresis effects in manganite spintronics devices
Description
By carrying out differential resistance measurements in oxygen deficient La0.67Ba0.33MnO3− thin films at
different magnetic fields, in submicrometric constricted regions patterned by focused ion beam, we find evidence
of hysteretic resistance behavior as a function of both the external magnetic field and dc bias current.
The resistance curves exhibit a marked asymmetry with respect to the polarity of the current. We suggest that
the spin-polarized injected current exerts a torque on magnetic domains, whose rotation accounts for the
hysteretic resistance changes. The memory effect of such constrictions is potentially interesting both for
studying micromagnetic effects and in view of spintronics devices applications.
Additional details
Identifiers
- URL
- http://hdl.handle.net/11567/226405
- URN
- urn:oai:iris.unige.it:11567/226405
Origin repository
- Origin repository
- UNIGE