Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics

Creators: Mehta, J.; Abid, Idriss; Elwaradi, Reda; Cordier, Yvon; Medjdoub, F

Others:: WIde baNd gap materials and Devices - IEMN (WIND - IEMN) ; Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; Université catholique de Lille (UCL)-Université catholique de Lille (UCL); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA); Université Côte d'Azur (UCA); Author would like to thank T.H. Ngo for the AFM measurements and M. Nemoz for XRD scans. This work was supported by the French RENATECH Network, the "Investissements d'Avenir" Program GaNeX (ANR-11-LABX-0014) as well as part of project ACTION (ANR-22-CE05-0028).; Renatech Network; CMNF; ANR-22-CE05-0028,ACTION,Nouveau transistors à canaux AlGaN pour les applications à haute tension(2022); ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)

Description

AlxGa1-xN heterojunction FETs (HFETs) have been an eye catcher for high voltage power electronics with its potential to outperform the predecessors by virtue of high critical breakdown field of the material, which can be tuned by varying Al mole-fraction. In this work, we demonstrate Al0.23Ga0.77N channel HFETs on bulk AlN with a maximum drain current density > 300 mA/mm and a specific Ron = 4 mΩ·cm2. A buffer electric breakdown field >10 MV/cm was measured. A high voltage robustness comparison of Al0.23Ga0.77N channel HFETs and thin GaN HFETs close to their respective hard breakdown voltages is also concluded, which reveals the superior reliable operation of Al0.23Ga0.77N channel HFETs up to 80% of hard breakdown voltages along with a consistent ION/IOFF ratio subsequent to 2000V voltage sweep.

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Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics

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