Voltage controlled terahertz transmission through GaN quantum wells

Creators: Laurent, T.; Sharma, R.; Torres, J.; Nouvel, P.; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, M.; Chenot, Sébastien; Faurie, Jp; Beaumont, B.; Shiktorov, P.; Starikov, E.; Gruzinskis, V.; Korotyevyev, V.; Kochelap, V.

Others:: Institut d'Electronique et des Systèmes (IES) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Térahertz, hyperfréquence et optique (TéHO) ; Institut d'Electronique et des Systèmes (IES) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

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We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas.

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Voltage controlled terahertz transmission through GaN quantum wells

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