Displacement Talbot Lithography for nano-engineering of III-nitride materials

Description

Nano-engineering III-Nitride semiconductors offers a route to further control the material and optoelectronic properties, enabling novel functionalities and applications. Although various lithography techniques are employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-Nitride materials. DTL, along with its combination with a lateral planar displacement (D 2 TL), allow the fabrication of numerous periodic nano-patterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. These nano-patterns have been used to create dielectric and metal masks in order to accomplish the following: the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nano-patterned sapphire substrates for AlN growth. Compared to their planar counterparts, these 3D nanostructures enable the reduction or filtering of defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, reproducible and achieved on a wafer scale via DTL, could potentially unlock the manufacturing of nano-engineered III-Nitride materials.

Abstract

International audience

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