Analysis and modeling of polaritonic gain in GaN ridge polariton lasers

Creators: Souissi, Hassen; Gromovyi, Maksym; Gueye, Thiaka; Brimont, Christelle; Doyennette, Laetitia; Solnyshkov, Dmitry; Malpuech, Guillaume; Cambril, Edmond; Bouchoule, Sophie; Alloing, Blandine; Rennesson, Stéphanie; Semond, Fabrice; Zúñiga-Pérez, Jesus; Guillet, Thierry

Others:: Laboratoire Charles Coulomb (L2C) ; Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM); Centre de Nanosciences et de Nanotechnologies (C2N) ; Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA); Institut Pascal (IP) ; Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne (UCA)-Institut national polytechnique Clermont Auvergne (INP Clermont Auvergne) ; Université Clermont Auvergne (UCA)-Université Clermont Auvergne (UCA); Institut universitaire de France (IUF) ; Ministère de l'Education nationale, de l'Enseignement supérieur et de la Recherche (M.E.N.E.S.R.)

Description

Following the demonstration of polariton lasing in GaN ridge polariton lasers [1,2], the polaritonic analog to conventional semiconductor diode lasers, we here analyse and model the laser dynamics in the interesting case of waveguide polaritons. The laser cavities are GaN etched ridge structures with DBRs operating under strong coupling [3] up to 300K with a 66 ± 10 meV Rabi splitting (Fig. 1(a,b)). They are optically pumped with a line-shaped spot, resonantly pumping the exciton reservoir.

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Analysis and modeling of polaritonic gain in GaN ridge polariton lasers

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