Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions

Creators: Lambert, D.; Baggio, J.; Hubert, G.; Ferlet-Cavrois, V.; Flament, O.; Saigné, Frédéric; Wrobel, Frédéric; Duarte, H.; Boch, J.; Sagnes, B.; Buard, N.; Carrière, T.

Others:: Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS); ONERA - The French Aerospace Lab [Toulouse] ; ONERA; DAM Île-de-France (DAM/DIF) ; Direction des Applications Militaires (DAM) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA); LPES - Laboratoire de Physique Electronique des Solides, EA 1174 ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA); EADS, Corporate Research Center ; EADS Paris

Description

This paper investigates the sensitivity of SOI and Bulk SRAMs to neutron irradiations with energies from 14 to 500 MeV. The technology sensitivity is analyzed with both experiments and Monte Carlo simulations. In particular, simulations include the nuclear interactions of neutrons with both silicon and oxygen nuclei (n-Si and n-O), in order to investigate the influence of isolation upper layers on the device sensitivity. The device cross-sections are analyzed for mono-energetic neutron irradiations and discussed in terms of nuclear interaction type (n-Si and n-O) and distribution of the secondary ion recoils. We also investigate the dimensions of the interaction volume around the sensitive cell as a function of the device architecture.

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Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions

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