Bifurcation Diagrams in MOS-NDR Frequency Divider Circuits

Description

The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an IV characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an "all MOS" version of one previously reported which use Resonant Tunneling Diodes (RTDs) The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit.

Abstract

Comunicación presentada al "Iberchip XVIII Workshop " celebrado en Playa del Carmen (México) del 29 de Febrero al 2 de Marzo del 2012.-- Presentado posteriormente al "19th IEEE International Conference on Electronics, Circuits and Systems (ICECS)" celebrado en Sevilla (España) del 9 al 12 de Diciembre del 2012.

Abstract

Gobierno de España TEC2007-67245/MIC

Abstract

Junta de Andalucía. Consejería de Innovación, Ciencia y Empresas P07-TIC-02961

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