Published October 5, 2003 | Version v1
Conference paper

Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls"

Description

International audience

Additional details

Identifiers

URL
https://hal.archives-ouvertes.fr/hal-00389899
URN
urn:oai:HAL:hal-00389899v1

Origin repository

Origin repository
UNICA