Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower

Description

The application of the flipped voltage follower to implement two high-performance circuits is presented: (1) The first is a class AB cascode flipped voltage follower that shows an improved slew rate and an improved bandwidth by very large factors and that has a higher output range than the conventional flipped voltage follower. It has a small signal figure of merit FOMSS = 46 MHz pF/μW and a current efficiency figure of merit FOMCE = 118. This is achieved by just introducing an addi- tional output current sourcing PMOS transistor (P-channel Metal Oxide Semiconductor Field Effect Transistor) that provides dynamic output current enhancement and increases the quiescent power dissipation by less than 10%. (2) The other is a high-performance low-voltage current mirror with a nominal gain accuracy better than 0.01%, 0.212 Ω input resistance, 112 GΩ output resistance, 1 V supply voltage requirements, 0.15 V input, and 0.2 V output compliance voltages. These char- acteristics are achieved by utilizing two auxiliary amplifiers and a level shifter that increase the power dissipation just moderately. Post-layout simulations verify the performance of the circuits in a commercial 180 nm CMOS (Complementary Metal Oxide Semiconductor) technology.

Abstract

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).

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