Published September 5, 2023
| Version v1
Publication
Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower
Description
The application of the flipped voltage follower to implement two high-performance circuits
is presented: (1) The first is a class AB cascode flipped voltage follower that shows an improved slew
rate and an improved bandwidth by very large factors and that has a higher output range than the
conventional flipped voltage follower. It has a small signal figure of merit FOMSS = 46 MHz pF/μW
and a current efficiency figure of merit FOMCE = 118. This is achieved by just introducing an addi-
tional output current sourcing PMOS transistor (P-channel Metal Oxide Semiconductor Field Effect
Transistor) that provides dynamic output current enhancement and increases the quiescent power
dissipation by less than 10%. (2) The other is a high-performance low-voltage current mirror with
a nominal gain accuracy better than 0.01%, 0.212 Ω input resistance, 112 GΩ output resistance,
1 V supply voltage requirements, 0.15 V input, and 0.2 V output compliance voltages. These char-
acteristics are achieved by utilizing two auxiliary amplifiers and a level shifter that increase the
power dissipation just moderately. Post-layout simulations verify the performance of the circuits in a
commercial 180 nm CMOS (Complementary Metal Oxide Semiconductor) technology.
Abstract
This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).Additional details
Identifiers
- URL
- https://idus.us.es/handle//11441/148654
- URN
- urn:oai:idus.us.es:11441/148654