Published May 25, 2003
| Version v1
Conference paper
Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers
Contributors
Others:
- Groupe d'étude des semiconducteurs (GES) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
- European Project: IST-2000-26478,GINA 1.5
Description
We study by time resolved photoluminescence (TRPL) low N and In content GaInNAs (GINA) alloy layers grown by molecular beam epitaxy on GaAs substrate. The TRPL experiments show the coexistence and the carrier exchanges between bound- and free-exciton states, in this kind of alloy. Temperature dependent experiments demonstrate the thermal ionization of bound excitons and the high temperature stability of free excitons. For a temperature higher than 60 K the PL spectra are totally dominated by the free exciton line.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-01312489
- URN
- urn:oai:HAL:hal-01312489v1
Origin repository
- Origin repository
- UNICA