Indirect Excitons in Group III-Nitride-Based Quantum Wells.

Description

In group-III nitride quantum wells, indirect excitons (IXs) are naturally formed because the electron-hole pair is separated along the growth (0001) axis by strong internal electric fields. These IXs therefore exhibit strong permanent dipole moments and extremely long radiative lifetimes (> 10µs). Previous extensive studies of IXs in GaAs-based, biased double quantum wells, at low temperatures, have emphasized promising properties: IXs can propagate over large distances, be controlled in-situ by light and external gate voltage, form cold and dense gases of interacting bosons, and may form collective quantum states of matter. Compared to IXs in arsenide heterostrutures, IXs in nitride QWs have much larger binding energies and smaller Bohr radii. This allows exploring IX propagation up to room temperature and over a range of exciton densities larger by two orders of magnitude. By using spatially- and time-resolved photoluminescence experiments we investigate the transport of dipolar excitons in GaN-(Al,Ga)N QWs, up to room-temperature, over distances of several tens of micrometers. Variations of conditions and comparison with models allow us to discuss the relative impacts on IX transport of important factors, such as disorder and exciton-exciton interaction.

Abstract

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