Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Creators: Cordier, Y.; Hugues, M.; Semond, F.; Natali, F.; Lorenzini, P.; Bougrioua, Z.; Massies, J.; Frayssinet, E.; Beaumont, B.; Gibart, P.; Faurie, J.-P.

Others:: Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA); iROc Technologies (IROC TECHNOLOGIES) ; Cadence Connection-EDA Consortium-FSA-Cubic Micro; Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); Saint-Gobain (LUMILOG) ; SAINT-GOBAIN LUMILOG

Description

In this work, AlGaN/GaN high electron mobility transistors have been grown by ammonia source molecular beam epitaxy (MBE) on silicon (1 1 1), silicon carbide and GaN templates on sapphire. The structural and electrical properties of these layers have been studied in order to determine the impact of substrate choice and buffer layer on active layer quality. Furthermore, an intercalated AlN layer grown on a GaN template is shown to enhance the insulating properties of the buffer.

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Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

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