Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
- Others:
- GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347) ; Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL) ; Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Institut für Experimentelle Physik II ; Universität Leipzig [Leipzig]
- NOVASiC, Savoie Technolac ; NOVASiC, Savoie Technolac
Description
Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si film with a roughness of only 3 nm for a film thickness of 400 nm. The number of rotation domains in the Si(110) epilayer was found to be two on this APD-free 3C-SiC surface. This is attributed to the in-plane azimuthal misalignment of the mirror planes between the two involved materials. We prove that fundamentally no further reduction of the number of domains can be expected for the given substrate. We suggest the necessity to use off-axis substrates to eventually favor a single domain growth.
Abstract
International audience
Additional details
- URL
- https://hal.science/hal-01741073
- URN
- urn:oai:HAL:hal-01741073v1
- Origin repository
- UNICA