Prediction of transients induced by neutrons/protons in CMOS combinational logic cells

Creators: Hubert, A.; Bougerol, A.; Miller, F.; Buard, N.; Anghel, Lorena; Carriere, T.; Wrobel, Frédéric; Gaillard, R.

Others:: EADS, Corporate Research Center ; EADS Paris; Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS); LPES - Laboratoire de Physique Electronique des Solides, EA 1174 ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA); INFODUC SA ; INFODUC

Description

This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.

Abstract

International audience

Prediction of transients induced by neutrons/protons in CMOS combinational logic cells

Description

Abstract

Additional details