Published 2006
| Version v1
Conference paper
Prediction of transients induced by neutrons/protons in CMOS combinational logic cells
Contributors
Others:
- EADS, Corporate Research Center ; EADS Paris
- Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)
- LPES - Laboratoire de Physique Electronique des Solides, EA 1174 ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)
- INFODUC SA ; INFODUC
Description
This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-00142517
- URN
- urn:oai:HAL:hal-00142517v1
Origin repository
- Origin repository
- UNICA