Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Creators: Guhne, Tobias; Bougrioua, Zahia; Albrecht, Martin; Vennéguès, Phillippe; Leroux, Mathieu; Laügt, Marguerite; Ndiaye, Sosse; Teisseire, Monique; Nguyen, Luan; Gibart, Pierre

Others:: Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA); Leibniz-Institut für Kristallzüchtung (IKZ) (IKZ); Saint-Gobain (LUMILOG) ; SAINT-GOBAIN LUMILOG

Description

Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carried out in order to identify defect related transitions, to resolve their localization and to study the efficiency of ELO concerning defect filtration. The wing region of semipolar GaN is shown to be almost defect free with a luminescence spectrum dominated by the GaN emission at 3,472 eV. It is shown that the defect related emissions are localized in the seed, but different defects occur as well in the wing, especially in A-plane (nonpolar) GaN.

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Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

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