Published July 7, 2014 | Version v1
Journal article

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

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Description

We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a 7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

Abstract

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URL
https://hal.archives-ouvertes.fr/hal-01130613
URN
urn:oai:HAL:hal-01130613v1

Origin repository

Origin repository
UNICA