Published April 6, 2017
| Version v1
Publication
Photosensitivity Color-Center Model for Ge-Doped Silica Preforms
Description
A new photosensitivity physical model for Ge-doped silica preforms based on
color-center photoreactions is presented. Simulation results are in close agreement with
experimental results obtained by several condensed matter physics research groups working
in this field, suggesting that the photoreactions of this model may, indeed, describe the
physical processes involved in Ge-doped silica preform photosensitivity. The proposed
photosensitivity model is defined by two differential equations that describe the temporal
evolution of a set of color-center concentrations. The first is a modification of a very fast
reversible reaction previously proposed by Fujimaki et al., where the reaction precursor has
a different chemical structure (it is a neutral oxygen divacancy NODV unrelated to the
previously proposed germanium lone pair center GLPC). The chemical structure of this
precursor defect explains the generation of nonintrinsic neutral oxygen monovacancy
ðNOMVÞ color centers. These centers are transformed into GeE0 defects by means of a
second nonlinear reaction. This justifies the slow increase in the absorption peak experimentally
measured at 6.3 eV, which had no satisfactory explanation.
Abstract
Ministerio de Ciencia y Tecnología TIC2001-2969-C03-02Additional details
Identifiers
- URL
- https://idus.us.es/handle/11441/57296
- URN
- urn:oai:idus.us.es:11441/57296