ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy

Description

In this work, ammonia source molecular beam epitaxy is explored as an alternative technique to grow ScAlN/GaN Electron Mobility Transistor heterostructures. The effect of growth temperature and ScAlN barrier thickness on 2-dimensional electron gas density is investigated with capacitance-voltage measurements. A transistor with a maximum drain current superior to 1 A/mm has been fabricated on Silicon substrate despite the ohmic contacts present a resistance around 1 ohm.mm, and functional transistors with ScAlN barriers as thin as 5 nm have been demonstrated.

Abstract

International audience

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