Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

Creators: Cortes, I.; Al-Alam, E.; Besland, Marie-Paule; Regreny, P.; Morancho, Frédéric; Cazarre, A.; Cordier, Y.; Goullet, Antoine; Isoird, Karine

Others:: Institut des Matériaux Jean Rouxel (IMN) ; Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST) ; Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN) ; Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

Description

In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300 degrees C) on an N-type GaN epitaxial layer have been performed to analyze the quality and reliability of the resultant MOS device. Additional information has been extracted by comparing the small-signal simulations of equivalent MOS 2D structures with the C-V experimental results.

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Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

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Abstract

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