Published May 2005
| Version v1
Journal article
Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs
Contributors
Others:
- Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Saint-Gobain (LUMILOG) ; SAINT-GOBAIN LUMILOG
- E. Politécnica. Universidad de Alcalá
- ISOM-Univ. Politécnica de Madrid ( UPM ). ETSIT ; ISOM-Univ. Politécnica de Madrid ( UPM ). ETSIT
Description
Highly resistive GaN (>1E+8 Ω#) is grown by MOVPE on sapphire with dislocation density in the range 1E+8 to 8E+8 /cm², using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm²/V/s at n_s∼7.6E+12 /cm². Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I_DS_max = 1.28 A/mm, gm_max ∼ 290 mS/mm and f_T ∼ 23 GHz were measured for 0.2 µm transistors.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.archives-ouvertes.fr/hal-02906540
- URN
- urn:oai:HAL:hal-02906540v1
Origin repository
- Origin repository
- UNICA