A Compact Size Wideband RF-VGA Based on Second Generation Controlled Current Conveyors

Description

This paper presents a methodology to design a wideband radio frequency variable gain amplifier (RF-VGA) in a low-cost SiGe BiCMOS 0.35 μm process. The circuit uses two Class A amplifiers based on second-generation controlled current conveyors (CCCII). The main feature of this circuit is the wideband input match along with a reduced NF (5.5–9.6 dB) and, to the authors' knowledge, the lowest die footprint reported (62 × 44 μm2 area). The implementation of the RF-VGA based on CCCII allows a wideband input match without the need of passive elements. Due to the nature of the circuit, when the gain is increased, the power consumption is reduced. The architecture is suitable for designing wideband, low-power, and low-noise amplifiers. The proposed design achieves a tunable gain of 6.7–18 dB and a power consumption of 1.7 mA with a ±1.5 V DC supply. At maximum gain, the proposed RF-VGA covers from DC up to 1 GHz and can find application in software design radios (SDRs), the low frequency medical implant communication system (MICS) or industrial, scientific, and medical (ISM) bands.

Abstract

Ministerio de Ciencia, Innovación y Universidades de España RTI2018-099189-B-C22

Abstract

Agencia Canaria de Investigación, Innovación y Sociedad de la Información (ACIISI) del Gobierno de Canarias ProID2017010067 y TESIS2019010100

Additional details