Published August 21, 2024 | Version v1
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Characterization of Very Thin 3C-SiC Epilayers on Si

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We verify experimentally to what extent the intensity of 3C-SiC TO peak in infrared reflectance spectrum can be used to estimate the thickness of extremely thin 3C-SiC epilayers on Si. The influence of several Si substrate characteristics (orientation, doping level, back-side surface preparation) on the peak calibration is discussed.

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URL
https://hal.science/hal-04791367
URN
urn:oai:HAL:hal-04791367v1

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UNICA