Published January 22, 2018 | Version v1
Publication Metadata-only

Compositional characterization of SiC-SiO2 interfaces in MOSFETs

Beltrán, Ana M.
Schamm-Chardon, Sylvie
Mortet, Vincent
Bedel-Pereira, Eléna
Cristiano, Fuccio
Strenger, C.
Bauer, A.J.
Others:
Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte
Universidad de Sevilla. TEP123: Metalurgia e Ingeniería de los Materiales

Description

In the context of the MobiSiC project (Mobility engineering for SiC devices) we study 4H-SiC MOSFETs with the aim to get more insight in the C distribution and nature across the SiC-SiO2 interface and to correlate the results with electron mobility measurements. Investigations are based on the combination of structural and compositional analyses carried out by high resolution transmission electron microscopy (HRTEM) and spatially resolved EELS.

Additional details

Identifiers Origin repository
Created:
March 25, 2023
Modified:
November 30, 2023