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AGBOTON , Alain

Last name: AGBOTON

First name: Alain

October 6, 2014 (v1)

Conference paper

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On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Altuntas, Philippe Defrance, N. Lesecq, Marie

This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps located under the conduction band. A model is...

Uploaded on: December 4, 2022
April 2015 (v1)

Journal article

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Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate

Altuntas, Philippe Lecourt, François Cutivet, Adrien

This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 A.mm(-1) and a peak extrinsic transconductance of 374 mS.mm(-1) are obtained for 75-nm gate length device. At V-DS = 25...

Uploaded on: December 4, 2022
2013 (v1)

Conference paper

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STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

Lecourt, François Douvry, Yannick Lesecq, Marie

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Uploaded on: December 3, 2022