A
P
Last name: AUSTIN
First name: Patrick
International audience
Different technologies have been developed for the realization of AlGaN/GaN HEMTs exhibiting the normally-off functionality, such the gate recess or the introduction of a P-GaN layer for lifting-up the conduction band level under the gate. Despite their respective advantages, the major drawbacks are the degradation of the carriers mobilities in...
The technology of GaN HEMT structures is the subject of major developments for large-gap power components. However, it is necessary to develop innovative technological solutions to obtain high-performance normally-off devices. We present a new normally-off structure based on a nanostructured P-GaN multi-well gate. The design of this structure,...
Un nouveau concept d'interrupteur de puissance HEMT en GaN présentant la fonctionnalité « normally-off » est expérimentalement validé. L'introduction d'une couche P-GaN suffisamment dopée (autour de 2 x 10 18 cm-3) au sein de la couche buffer GaN NID, en-dessous de l'électrode de grille et sous l'interface AlGaN / GaN, permet d'obtenir une...