BAH , Micka

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration via structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration...

AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and explain both the low level and the origin of propagation losses in GaN/3C–SiC/Si High Electron Mobility Transistors (HEMTs)...

AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves frequencies, which are critical for efficient...

In this work, an AlGaN/GaN HEMT structure is grown on a 0.8 μm thick 3C-SiC layer on high resistivity Silicon substrate. The RF propagation losses are investigated and compared with the ones of epi-layers grown directly on Silicon and on 6H-SiC substrates. Short gate length transistors are fabricated using e-beam lithography. In spite of ohmic...

This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using Metalorganic Vapor Phase Epitaxy (MOVPE) technique....

ABSTRACT In this paper, non-alloyed ohmic contacts regrown by molecular beam epitaxy (MBE) are fabricated on AlGaN/ GaN high-electron-mobility transistors on 6H-SiC substrate. Low ohmic contact resistance of 0.13 Ω.mm is obtained. This paper demonstrates the high frequency and high power performance improvements thanks to this technology...