The laser pulses controlling the ion evaporation in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite photoluminescence in semiconductor or insulating specimens [1]. An atom probe equipped with approriate focalization and collection optics can thus be coupled with an in-situ micro-photoluminescence (μPL) bench [2] that can...
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June 26, 2023 (v1)Conference paperUploaded on: February 24, 2024
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July 17, 2017 (v1)Journal article
International audience
Uploaded on: February 27, 2023 -
2018 (v1)Journal article
Ternary semiconductor alloys based on the AyB1-yC stoichiometry are widely employed in electronic devices and their composition plays a key role in bandgap engineering of heterostructures. We have studied the crucial issue of accuracy in composition measurements of AlyGa1-yN and MgyZn1-y O alloys by Atom Probe Tomography. The results indicate a...
Uploaded on: December 4, 2022 -
July 2016 (v1)Journal article
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Uploaded on: December 4, 2022