BRAULT , J.

Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron microscopy experiments. It was found that the porosity of the GaN layers could be...

AlGaN-based heterostructures are promising candidates for the fabrication of ultraviolet light-emitting diodes. The analysis of the atomic composition of the grown epitaxial films is important from a technological point of view, allowing precise control over the wavelength and intensity of the emitted light. In this work, the depth profiling of...

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We present capacitance-voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski-Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this...