BUCKLEY , Julien

In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high ION/IOFF (~109) ratio and a significantly small gate leakage current (10−11 A/mm). Thanks to an improved resistance partitioning method, the resistances of the trench...

In this work, fully-vertical GaN trench-MOSFET based-on an ALD-Al2O3 gate dielectric were fabricated and characterized to evaluate its electrical performances. Transistors show a normally-OFF behaviour with high I$_{ON}$/I$_{OFF}$ (~10$^9$ ) and significantly small gate leakage current (10$^{-11}$ A/mm). Thanks to an improved resistance...

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In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaNon-GaN Schottky diode is explored by I-V and C-V characterisation. TMAH surface treatment leads to an improvement in the forward and reverse characteristics ofthe device and improvement in breakdown voltage (BV) by almost 200V compared to just...

Schottky barrier diodes on GaN on GaN substrates are fabricated for the purposeof material and technology characterization. The epitaxial layers are grown byMOCVD. I–V measurements as a function of the temperature in the range80–480 K show ideality factor (n) and barrier height (ϕB) variations not following athermionic (TE) model. Consequently,...

In this work, measurements from Cathodo-Luminescence (CL), micro-Raman spectroscopy and Breakdown Voltage (BV) have been coupled to assess the effects of physical parameters such as threading dislocations and effective doping level homogeneity on the electrical performances of vertical GaN Schottky and PN diodes. Two different substrates from...