June 7, 2019 (v1)
Conference paper
GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power multiplier applications. Fabrication process of GaN Schottky diodes...
Uploaded on: December 4, 2022