CONTRERAS , S.

We present a detailed investigation of the different factors that rule the temperature dependence of the AlGaN/AlN/GaN Hall-FET devices in the temperature range 300-500 degrees C. To understand the origin of the apparent increase in drive-in current density which affects devices above 300 degrees C, several series of experiments have been done....

We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead...