C
Y
Last name: CORDIER
First name: Yvon
Institution: UOM
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Les matériaux semiconducteurs jouent aujourd'hui un grand rôle dans les dispositifs électroniques et optoélectroniques. En particulier, qu'il s'agisse des télécommunications par voies Hertziennes ou Microondes, sur Terre ou en liaison avec des satellites, ou encore de radars ou de gestion de l'énergie, les semiconducteurs à grande largeur de...
We present magnetotransport measurements on a high electron density AlGaN/GaN heterostructure with two subbands populated at $\tau$ = 1.6 K. The transport scattering times, $\tau_\text{tr}$ , of each subband are first derived at low magnetic field by taking into account the magneto-intersubband scattering term. Then the quantum scattering...
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GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. Devices and circuits based on these emerging materials are more suited to operate at higher voltages and temperatures than Si-based devices owing to their superior physical properties. Recently, AlGaN/GaN based high...
AlxGa1-xN heterojunction FETs (HFETs) have been an eye catcher for high voltage power electronics with its potential to outperform the predecessors by virtue of high critical breakdown field of the material, which can be tuned by varying Al mole-fraction. In this work, we demonstrate Al0.23Ga0.77N channel HFETs on bulk AlN with a maximum drain...
We verify experimentally to what extent the intensity of 3C-SiC TO peak in infrared reflectance spectrum can be used to estimate the thickness of extremely thin 3C-SiC epilayers on Si. The influence of several Si substrate characteristics (orientation, doping level, back-side surface preparation) on the peak calibration is discussed.
GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN...
This paper presents a Young's modulus extraction method for thin film group III-nitrides materials such as GaN, AlN, and its ternary AlGaN. The AlGaN/GaN heterostructures are grown by molecular beam epitaxy on Si (111) substrate and designed for MEMS applications. Various cantilevers with a width of 10 µm and lengths going from 100 to 310 µm...
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Despite a high lateral breakdown voltage above 10 kV for large contact distances and a breakdown field of 5 MV cm −1 for short contact distances, an Al 0.9 Ga 0.1 N/GaN heterostructure with an 8 nm strained GaN channel grown on an AlN/sapphire template suffers from a low and anisotropic mobility. This work deals with a material study to...
In this work, ammonia source molecular beam epitaxy is explored as an alternative technique to grow ScAlN/GaN High Electron Mobility Transistor heterostructures. The effect of growth temperature and ScAlN barrier thickness on 2dimensional electron gas density is investigated with capacitancevoltage measurements. A transistor with a maximum...
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