COULON , Pierre-Marie

This work focus on growth and characterization of GaN Nanowires (NWs) and Microwires (µWs). Such structures are obtained by Metal Organic Vapor Phase Epitaxy with two growth strategies: one called self-organized which is realized on sapphire, and the other named selective area growth which is obtained on a GaN Ga-polar template. Whatever the...

Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitridebased devices. In contrast to plasma etching, it allows, for example, the creation of enclosed features with extremely high aspect ratios without...

International audience

International audience

Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of...

International audience

International audience

In this paper, we report the use of three pendeo-epitaxy growth approaches as a way of reducing the threading dislocation density (TDD) of 20 × 20 μm$^2$ GaN platelets to be used for the development of micro light-emitting diodes (μLEDs). The method relies on the coalescence of GaN crystallites grown on top of a network of deformable pillars...

Nano-engineering III-Nitride semiconductors offers a route to further control the material and optoelectronic properties, enabling novel functionalities and applications. Although various lithography techniques are employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for...

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