C
A
Last name: COURVILLE
First name: A.
International audience
International audience
International audience
Off-axis electron holography has been used to measure the width of the depletion region in a series of Tunnel Junction GaN light emitting diodes that have been prepared using different growth processes for blue emission. The total measured potentials are combinations of the mean inner potential, dopant potential and piezoelectric contributions....
III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultraviolet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a photonics platform based on epitaxial GaN-on-insulator on silicon. The transfer of the epi-material...
GaN/AlxGa1−xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6–8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect due to the presence of the internal electric field which...