Porous GaN and (Ga,In)N/GaN single quantum well layers are fabricated using a selective area sublimation (SAS) technique from initially smooth and compact 2-dimensional (D) layers grown on Si(111) or c-plane sapphire substrates. The photoluminescence properties of these porous layers are measured and compared to reference non-porous samples....
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December 21, 2017 (v1)Journal articleUploaded on: December 3, 2022
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2020 (v1)Journal article
In this work is studied the growth of InGaN on epitaxial graphene by molecular beam epitaxy. The nucleation of the alloy follows a three-dimensional (3D) growth mode, in the explored temperature range of 515-765°C, leading to the formation of dendrite-like islands. Careful Raman scattering experiments show that the graphene underneath is not...
Uploaded on: December 4, 2022 -
February 3, 2014 (v1)Conference paper
Al, Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still...
Uploaded on: March 26, 2023 -
March 15, 2017 (v1)Journal article
We comparatively study the onset of photo-induced non-radiative intrinsic Auger recombination processes for red, yellow and green light emitting InGaNsingle bondGaN hetero-structures grown along the polar orientation. We find a dramatic reduction of the photo excitation densities triggering the domination of Auger effect with increasing...
Uploaded on: February 28, 2023 -
June 1, 2020 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
June 15, 2024 (v1)Journal article
Here, we report the first experimental demonstration of InN nanowire solar cells deposited by RF sputtering with a bandgap energy of 1.78 eV. By adding an amorphous Si (a-Si) buffer to the n-InN/p-Si structure, we have improved the photovoltaic performance of the resulting devices while maintaining their material quality. We have firstly...
Uploaded on: October 24, 2024 -
September 22, 2015 (v1)Journal article
We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, and Yoichi Kawakami, Journal of Applied Physics 117,...
Uploaded on: March 26, 2023 -
May 2019 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
July 2022 (v1)Journal article
International audience
Uploaded on: December 3, 2022 -
February 3, 2018 (v1)Journal article
The optical properties of Al0.1Ga0.9N nanostructures grown by molecular beam epitaxy on Al0.5Ga0.5N (0001) templates are investigated. By combining morphological and photo- luminescence (PL) characterizations, we have performed an in-depth analysis of the nanostructures properties as a function of the deposited amount. It is shown that: 1) the...
Uploaded on: February 28, 2023 -
October 26, 2018 (v1)Journal article
We investigate the optical properties of porous GaN films of different porosities, focusing on the behaviors of the excitonic features in time-integrated and time-resolved photoluminescence. A substantial enhancement of both excitonic emission intensity and recombination rate, along with insignificant intensity weakening under temperature rise,...
Uploaded on: December 4, 2022 -
January 29, 2021 (v1)Journal article
Any arbitrary state of polarization of a light beam can be decomposed into a linear superposition of two orthogonal direction of the oscillations, each of which has a specific amplitude of the electric field. The dispersive nature of diffractive and refractive optical components generally affects these amplitudes significantly over a small...
Uploaded on: December 3, 2022 -
December 14, 2019 (v1)Journal article
The use of tunnel junctions (TJs) is a potential solution in blue LEDs to poor p-contacts, replacing it by another n-contact. TJs are even more advantageous for UV emitting structures, which suffer from the considerably low injection efficiency in high Al concentration UV LEDs. In this work we report our work on Ge n-doped GaN and AlGaN TJs...
Uploaded on: December 4, 2022 -
October 2, 2014 (v1)Journal article
Time-resolved photoluminescence spectra of orange light emitting (Ga,In)N-based devices have been grown by metal-organic vapour phase epitaxy on C plane sapphire for indium compositions ranging up to 23 percents. The temperature dependent time resolved photoluminescence spectra collected through the 8K-300K range are found to exhibit behaviours...
Uploaded on: March 26, 2023