Individual pillars were etched from a sample embedding a single plane of GaN/AlN quantum dots, deposited by molecular beam epitaxy on a sapphire substrate. Pillars with diameters ranging from 0.1 to 5 μm were fabricated by electron-beam lithography and SiCl4 reactive ion etching. The PL from a single pillar could be measured by using a confocal...
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May 24, 2004 (v1)PublicationUploaded on: February 28, 2023
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March 2013 (v1)Journal article
The stress distribution on crack free thick continuous GaN film (12 mu m) grown by Metal organic chemical vapour deposition (MOCVD) on the arrays of different sizes of the patterned silicon substrate is investigated by micro-Raman (mu Raman) spectroscopy. On the largest crack free mesa (400 mu m) both mu-photoluminescence (mu PL) at low...
Uploaded on: December 4, 2022 -
May 2018 (v1)Journal article
In this work, crack statistics are developed for MOCVD-grown 12 μm thick GaN on patterned Si substrate for different sizes, trench widths and trench heights of the mesas. Optical microscope is used to obtain the percentage ofcracked mesas in order to develop the crack statistics. The crack statistics show that the size and the trench height of...
Uploaded on: December 4, 2022